Gate Turn Off Thyristor (GTO), also known as Gate Turn Off Thyristor, is a fully controlled power semiconductor device that is a derivative of ordinary thyristors (SCR).
ADVANTAGE:
1. Fully controlled type: The gate can be independently controlled to turn on and off, simplifying the circuit.
2. High power: high voltage resistance, strong current carrying capacity, and surge current resistance.
3. Low cost: Compared to IGBT, it has a higher cost-effectiveness in high-power scenarios.
Shortcoming:
1. Low turn off gain: β _off ≈ 5, requiring large negative pulse current drive.
2. Complex driving: high requirements for turn off pulse power and di/dt.
3. Slow switching speed: The operating frequency is generally below 1kHz.
4. Circuit to be absorbed: When turned off, the voltage spike is large and prone to damage.
Applications：
1. Rail Transit Traction
Electric locomotives, subway traction inverters, DC chopper speed regulation.
2. Industrial variable frequency speed regulation
High voltage and high-power frequency converters, rolling mills, fans, and pump drives.
3. Power system
Static Var Compensator (SVC), High Voltage Direct Current Transmission (HVDC) Converter Valve.
4. Special power supply
Induction heating, electroplating power supply UPS、 Welding equipment.
5. Other
High voltage DC switch, pulse power device, energy storage system.
